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APT30GP60B
600V
POWER MOS 7 IGBT
A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7(R) IGBT provides a lower cost alternative to a Power MOSFET.
TO-247
(R)
G
C
C E
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
* 100 kHz operation @ 400V, 37A * 200 kHz operation @ 400V, 24A * SSOA rated
G E
All Ratings: TC = 25C unless otherwise specified.
APT30GP60B UNIT
600 20 30 100 49 120 120A @ 600V 463 -55 to 150 300
Watts C Amps Volts
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 25C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 250
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
I CES I GES
A nA
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2500
6-2003 050-7400 Rev D
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT30GP60B
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 30A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC(Peak) = 400V VGE = 15V I C = 30A
4
MIN
TYP
MAX
UNIT
3200 295 20 7.5 90 20 30 120 13 18 55 46 260 335 250 330 13 18 84 80 260 508 518 750 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5 6
R G = 5 TJ = +25C
J
Inductive Switching (125C) VCC(Peak) = 400V VGE = 15V I C = 30A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.27 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
6-2003 050-7400 Rev D
TYPICAL PREFORMANCE CURVES
60
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT30GP60B
60 50
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
50 40
TC=-55C
TC=-55C
40
30
30 20 TC=125C
20 TC=25C 10 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 200 180 TC=125C
TC=25C
10 0
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 VCE=480V 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 GATE CHARGE (nC) FIGURE 4, Gate Charge
IC = 30A TJ = 25C
IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20 0 0
TJ = -55C
VCE=120V VCE=300V
TJ = 25C TJ = 125C
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4 3.5 3 2.5
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
3.5 3 2.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC= 60A IC= 30A 2 1.5 1 0.5 0 -50 IC=15A
IC= 60A IC= 30A
2 1.5 1 0.5 0
IC= 15A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
6
-25 0 25 50 75 100 125 TJ, JUNCTION TRMPERATURE (C) FIGURE 6, On State Voltage vs Junction Temperature 140
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.90 0.85 0.8 -50
120 100 80 60 40 20 0 -50
6-2003 050-7400 Rev D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
APT30GP60B
25 VGE= 10V
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
100 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
RG = 5, L = 100H, VCE = 400V VGE =10V,TJ=25C VGE =10V,TJ=125C VGE =15V,TJ=125C
20
VCE = 400V RG = 5 L = 100 H
15 VGE= 15V 10
VGE =15V,TJ=25C
5
0 0
VCE = 400V TJ = 25C, TJ =125C RG = 5 L = 100 H
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 50 TJ = 25 or 125C,VGE = 10V 40
tr, RISE TIME (ns) tf, FALL TIME (ns)
80
TJ = 125C, VGE = 10V or 15V
30
60
20
40
TJ = 25C, VGE = 10V or 15V
10
TJ = 25 or 125C,VGE = 15V R = 5, L = 100H, VCE = 400V G
20
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1400 1200 1000
TJ = 125C,VGE =10V
0
0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1400
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V VGE = +15V RG = 5
0
EON2, TURN ON ENERGY LOSS (J)
VCE = 400V VGE = +15V RG = 5
T = 125C,VGE =15V J
1200 1000 800 600 400 200 0
TJ = 125C, VGE = 10V or 15V
800 600
TJ = 25C,VGE =15V
TJ = 25C, VGE = 10V or 15V
400
TJ = 25C,VGE =10V
200 0
0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 2500
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V TJ = 125C
0 10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 1600
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V RG = 5
2000 Eon2, 60A 1500 Eoff, 60A 1000 Eon2, 30A 500 Eoff, 30A Eoff, 15A 0 Eon2, 15A
1200
Eon2,60A
800
Eoff,60A
6-2003
400
Eon2,30A Eoff, 30A Eon2,15A Eoff, 15A 0
Rev D
050-7400
10 20 30 40 50 60 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PREFORMANCE CURVES
10,000 5,000 Cies 140 120
IC, COLLECTOR CURRENT (A)
APT30GP60B
C, CAPACITANCE ( F)
1,000 500 Coes 100 50 Cres
100 80 60 40 20 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
P
10 5 0
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.30
ZJC, THERMAL IMPEDANCE (C/W)
0.25
0.9
0.20
0.7
0.15
0.5 Note: 0.3
PDM
0.10
t1 t2
0.05
0.1 0.05 SINGLE PULSE 10-4
0 10-5
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL Junction temp. ( "C) 0.0196 0.00500F
300
FMAX, OPERATING FREQUENCY (kHz)
100
Power (Watts)
0.107
0.0132F
Fmax = min(f max1 ,f max 2 )
50
f max1 =
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
0.05 t d(on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
0.144 Case temperature
0.135F
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10
0
10 20 30 40 50 60 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
TJ - TC R JC
050-7400
Rev D
6-2003
APT30GP60B
APT15DF60
10 %
Gate Voltage TJ = 125 C td(on) tr
V CC
IC
V CE
Collector Current 90%
A D.U.T.
5% 10% 5% Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% td(off)
VTEST
Gate Voltage Collector Voltage tf
TJ = 125 C
A
*DRIVER SAME TYPE AS D.U.T.
V CE
90%
IC 100uH V CLAMP B
10% Switching Energy
0
A D.U.T.
Collector Current
DRIVER*
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
6-2003
Gate Collector Emitter
Rev D
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7400

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